Search Results ( 159 products found )
- Item Description
- Search Criteria
- Item Description
-
- MOSFET - 2N7002 2n7002.pdf
- Search Criteria
-
- Part Number : 2N7002
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1300 mOhms
- Total Gate Charge (nQ) typ : 1.7 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 2.5 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
-
- MOSFET - 2N7002K 2n7002k.pdf
- Search Criteria
-
- Part Number : 2N7002K
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1300 mOhms
- Total Gate Charge (nQ) typ : 1.7 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 2.5 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
-
- MOSFET - MDZ1N60 rm1n6092.pdf
- Search Criteria
-
- Part Number : MDZ1N60
- Vdss (V) : 600 V
- Id @ 25C (A) : 0.4 A
- Rds-on (typ) (mOhms) : 8500 mOhms
- Total Gate Charge (nQ) typ : 3.5 nQ
- Maximum Power Dissipation (W) : 2.5 W
- Vgs(th) (typ) : 4 V
- Input Capacitance (Ciss) : 130 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-92
- Item Description
-
- MOSFET - RD5N60 rd5n60.pdf
- Search Criteria
-
- Part Number : RD5N60
- Vdss (V) : 600 V
- Id @ 25C (A) : 5.0 A
- Rds-on (typ) (mOhms) : 2000 mOhms
- Total Gate Charge (nQ) typ : 3 nQ
- Maximum Power Dissipation (W) : 35 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 515 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252
- Item Description
-
- MOSFET - RI2N60 ri2n60.pdf
- Search Criteria
-
- Part Number : RI2N60
- Vdss (V) : 600 V
- Id @ 25C (A) : 2.0 A
- Rds-on (typ) (mOhms) : 4000 mOhms
- Total Gate Charge (nQ) typ : 3 nQ
- Maximum Power Dissipation (W) : 45 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 320 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-251
- Item Description
-
- MOSFET - RI4N70 ri4n70.pdf
- Search Criteria
-
- Part Number : RI4N70
- Vdss (V) : 700 V
- Id @ 25C (A) : 4.0 A
- Rds-on (typ) (mOhms) : 2800 mOhms
- Total Gate Charge (nQ) typ : 3 nQ
- Maximum Power Dissipation (W) : 106 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 520 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-251
- Item Description
-
- MOSFET - RM04N30S2 rm04n30s2.pdf
- Search Criteria
-
- Part Number : RM04N30S2
- Vdss (V) : 30 V
- Id @ 25C (A) : 3.6 A
- Rds-on (typ) (mOhms) : 58 mOhms
- Total Gate Charge (nQ) typ : 4.0 nQ
- Maximum Power Dissipation (W) : 1.7 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 230 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
-
- MOSFET - RM100N30DF rm100n30df.pdf
- Search Criteria
-
- Part Number : RM100N30DF
- Vdss (V) : 30 V
- Id @ 25C (A) : 100.0 A
- Rds-on (typ) (mOhms) : 1.9 mOhms
- Total Gate Charge (nQ) typ : 38 nQ
- Maximum Power Dissipation (W) : 65 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 5000 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN
- Item Description
-
- MOSFET - RM100N60T2 rm100n60t2.pdf
- Search Criteria
-
- Part Number : RM100N60T2
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
-
- MOSFET - RM110N150HD rm110n150hd.pdf
- Search Criteria
-
- Part Number : RM110N150HD
- Vdss (V) : 150 V
- Id @ 25C (A) : 110 A
- Rds-on (typ) (mOhms) : 6.0 mOhms
- Total Gate Charge (nQ) typ : 150 nQ
- Maximum Power Dissipation (W) : 300 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 10000 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-263
- Item Description
-
- MOSFET - RM110N85T2 rm110n85t2.pdf
- Search Criteria
-
- Part Number : RM110N85T2
- Vdss (V) : 85 V
- Id @ 25C (A) : 110 A
- Rds-on (typ) (mOhms) : 5 mOhms
- Total Gate Charge (nQ) typ : 54 nQ
- Maximum Power Dissipation (W) : 145 W
- Vgs(th) (typ) : 3.3 V
- Input Capacitance (Ciss) : 3870 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
-
- MOSFET - RM11N800TI rm11n800t1(t2).pdf
- Search Criteria
-
- Part Number : RM11N800TI
- Vdss (V) : 800 V
- Id @ 25C (A) : 11.0 A
- Rds-on (typ) (mOhms) : 420 mOhms
- Total Gate Charge (nQ) typ : 48 nQ
- Maximum Power Dissipation (W) : 33.8 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 2600 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220F
- Item Description
-
- MOSFET - RM11N800T2 rm11n800t1(t2).pdf
- Search Criteria
-
- Part Number : RM11N800T2
- Vdss (V) : 800 V
- Id @ 25C (A) : 11.0 A
- Rds-on (typ) (mOhms) : 420 mOhms
- Total Gate Charge (nQ) typ : 48 nQ
- Maximum Power Dissipation (W) : 188 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 2600 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
-
- MOSFET - RM120N30DF rm120n30df.pdf
- Search Criteria
-
- Part Number : RM120N30DF
- Vdss (V) : 30 V
- Id @ 25C (A) : 120 A
- Rds-on (typ) (mOhms) : 1.95 mOhms
- Total Gate Charge (nQ) typ : 63 nQ
- Maximum Power Dissipation (W) : 75 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 3550 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN
- Item Description
-
- MOSFET - RM120N40T2 rm120n40t2.pdf
- Search Criteria
-
- Part Number : RM120N40T2
- Vdss (V) : 40 V
- Id @ 25C (A) : 120 A
- Rds-on (typ) (mOhms) : 3.2 mOhms
- Total Gate Charge (nQ) typ : 75 nQ
- Maximum Power Dissipation (W) : 130 W
- Vgs(th) (typ) : 1.9 V
- Input Capacitance (Ciss) : 5400 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
-
- MOSFET - RM120N85T2 rm120n85t2.pdf
- Search Criteria
-
- Part Number : RM120N85T2
- Vdss (V) : 85 V
- Id @ 25C (A) : 120 A
- Rds-on (typ) (mOhms) : 4.5 mOhms
- Total Gate Charge (nQ) typ : 55 nQ
- Maximum Power Dissipation (W) : 160 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 5500 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
-
- MOSFET - RM1216 rm1216.pdf
- Search Criteria
-
- Part Number : RM1216
- Vdss (V) : 12.0 V
- Id @ 25C (A) : 16.0 A
- Rds-on (typ) (mOhms) : 11.5 mOhms
- Total Gate Charge (nQ) typ : 35 nQ
- Maximum Power Dissipation (W) : 18 W
- Vgs(th) (typ) : 0.7 V
- Input Capacitance (Ciss) : 2700 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN
- Item Description
-
- MOSFET - RM12N500T2 rm12n500t2.pdf
- Search Criteria
-
- Part Number : RM12N500T2
- Vdss (V) : 500 V
- Id @ 25C (A) : 12.0 A
- Rds-on (typ) (mOhms) : 520 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
-
- MOSFET - RM12N650HD rm12n650ti(hd)(t2).pdf
- Search Criteria
-
- Part Number : RM12N650HD
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-263
- Item Description
-
- MOSFET - RM12N650IP rm12n650ld-ip.pdf
- Search Criteria
-
- Part Number : RM12N650IP
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-251
- Item Description
-
- MOSFET - RM12N650LD rm12n650ld-ip.pdf
- Search Criteria
-
- Part Number : RM12N650LD
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252
- Item Description
-
- MOSFET - RM12N650TI rm12n650ti(hd)(t2).pdf
- Search Criteria
-
- Part Number : RM12N650TI
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 32.6 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220F
- Item Description
-
- MOSFET - RM12N650T2 rm12n650ti(hd)(t2).pdf
- Search Criteria
-
- Part Number : RM12N650T2
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
-
- MOSFET - RM12P30S8 rm12p30s8.pdf
- Search Criteria
-
- Part Number : RM12P30S8
- Vdss (V) : 30 V
- Id @ 25C (A) : 12.0 A
- Rds-on (typ) (mOhms) : 25 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 3 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 1750 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
-
- MOSFET - RM135N100HD rm135n100hd.pdf
- Search Criteria
-
- Part Number : RM135N100HD
- Vdss (V) : 100 V
- Id @ 25C (A) : 135 A
- Rds-on (typ) (mOhms) : 3.7 mOhms
- Total Gate Charge (nQ) typ : 100 nQ
- Maximum Power Dissipation (W) : 220 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 7500 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-263