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You are in MOSFET / SiC

Vdss (V)

Id @ 25C (A)

Rds-on (typ) (mOhms)

Total Gate Charge (nQ) typ

Maximum Power Dissipation (W)

Input Capacitance (Ciss)

Polarity

Mounting Style

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Certified (AEC-Q101...etc)

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MOSFET / SiC - 2N7002 2n7002.pdf
Search Criteria
- Part Number : 2N7002
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1300 mOhms
- Total Gate Charge (nQ) typ : 1.7 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 2.5 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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MOSFET / SiC - 2N7002DS6 2n7002ds6.pdf
Search Criteria
- Part Number : 2N7002DS6
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.25 A
- Rds-on (typ) (mOhms) : 1500 mOhms
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 1.45 V
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-363
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MOSFET / SiC - 2N7002K 2n7002k.pdf
Search Criteria
- Part Number : 2N7002K
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1300 mOhms
- Total Gate Charge (nQ) typ : 1.7 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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MOSFET / SiC - 2N7002K36 2n7002k36.pdf
Search Criteria
- Part Number : 2N7002K36
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.25 A
- Rds-on (typ) (mOhms) : 1500 mOhms
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 1.45 V
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23-6L
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Item Description
MOSFET / SiC - 2N7002KA 2n7002ka.pdf
Search Criteria
- Part Number : 2N7002KA
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.115 A
- Rds-on (typ) (mOhms) : 1.4 mOhms
- Maximum Power Dissipation (W) : 0.225 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 17 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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Item Description
MOSFET / SiC - 2N7002KB 2n7002kb.pdf
Search Criteria
- Part Number : 2N7002KB
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.34 A
- Total Gate Charge (nQ) typ : 30 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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Item Description
MOSFET / SiC - 2N7002KBV 2n7002kbv.pdf
Search Criteria
- Part Number : 2N7002KBV
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.34 A
- Total Gate Charge (nQ) typ : 30 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Certified (AEC-Q101...etc) : AEC-Q101
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Item Description
MOSFET / SiC - 2N7002KS3 2n7002ks3.pdf
Search Criteria
- Part Number : 2N7002KS3
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.32 A
- Rds-on (typ) (mOhms) : 2300 mOhms
- Maximum Power Dissipation (W) : 0.3 W
- Vgs(th) (typ) : 1.45 V
- Input Capacitance (Ciss) : 34 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-323
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Item Description
MOSFET / SiC - 2N7002KS6 2n7002ks6.pdf
Search Criteria
- Part Number : 2N7002KS6
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.25 A
- Rds-on (typ) (mOhms) : 1500 mOhms
- Total Gate Charge (nQ) typ : 80 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 1.45 V
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-363
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Item Description
MOSFET / SiC - 2N7002KV 2n7002kv.pdf
Search Criteria
- Part Number : 2N7002KV
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1300 mOhms
- Total Gate Charge (nQ) typ : 1.7 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Certified (AEC-Q101...etc) : AEC-Q101
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Item Description
MOSFET / SiC - 2N7002V 2n7002v.pdf
Search Criteria
- Part Number : 2N7002V
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1300 mOhms
- Total Gate Charge (nQ) typ : 1.7 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 2.5 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Certified (AEC-Q101...etc) : AEC-Q101
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Item Description
MOSFET / SiC - BSS127 bss127.pdf
Search Criteria
- Part Number : BSS127
- Vdss (V) : 600 V
- Id @ 25C (A) : 0.021 A
- Rds-on (typ) (mOhms) : 310000 mOhms
- Total Gate Charge (nQ) typ : 0.07 nQ
- Maximum Power Dissipation (W) : 0.5 W
- Vgs(th) (typ) : 2.0 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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MOSFET / SiC - BSS127V bss127v.pdf
Search Criteria
- Part Number : BSS127V
- Vdss (V) : 600 V
- Id @ 25C (A) : 0.021 A
- Rds-on (typ) (mOhms) : 310 Ohms
- Total Gate Charge (nQ) typ : 0.07 nQ
- Maximum Power Dissipation (W) : 0.5 W
- Vgs(th) (typ) : 2.0 V
- Input Capacitance (Ciss) : 21 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Certified (AEC-Q101...etc) : AEC-Q101
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Item Description
MOSFET / SiC - BSS138W bss138w.pdf
Search Criteria
- Part Number : BSS138W
- Vdss (V) : 50 V
- Id @ 25C (A) : 0.22 A
- Rds-on (typ) (mOhms) : 3500 mOhms
- Maximum Power Dissipation (W) : 0.3 W
- Vgs(th) (typ) : 1.25 V
- Input Capacitance (Ciss) : 27 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-323
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MOSFET / SiC - MMBF4391 mmbf4391-mmbf4393.pdf
Search Criteria
- Part Number : MMBF4391
- Vdss (V) : 40 V
- Id @ 25C (A) : 0.05 A
- Rds-on (typ) (mOhms) : 30 Ohms
- Maximum Power Dissipation (W) : 0.225 W
- Input Capacitance (Ciss) : 3.5 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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Item Description
MOSFET / SiC - MMBF4392 mmbf4391-mmbf4393.pdf
Search Criteria
- Part Number : MMBF4392
- Vdss (V) : 40 V
- Id @ 25C (A) : 0.05 A
- Rds-on (typ) (mOhms) : 60 Ohms
- Maximum Power Dissipation (W) : 0.225 W
- Input Capacitance (Ciss) : 3.5 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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Item Description
MOSFET / SiC - MMBF4393 mmbf4391-mmbf4393.pdf
Search Criteria
- Part Number : MMBF4393
- Vdss (V) : 40 V
- Id @ 25C (A) : 0.05 A
- Rds-on (typ) (mOhms) : 100 Ohms
- Maximum Power Dissipation (W) : 0.225 W
- Input Capacitance (Ciss) : 3.5 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
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Item Description
MOSFET / SiC - RG100N650T7 rg100n650t7.pdf
Search Criteria
- Part Number : RG100N650T7
- Vdss (V) : 650 V
- Id @ 25C (A) : 100 A
- Total Gate Charge (nQ) typ : 280 nQ
- Maximum Power Dissipation (W) : 428 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 6900 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247
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Item Description
MOSFET / SiC - RI15N1200T7 ri15n1200t7.pdf
Search Criteria
- Part Number : RI15N1200T7
- Vdss (V) : 1200 V
- Id @ 25C (A) : 15 A
- Total Gate Charge (nQ) typ : 130 nQ
- Maximum Power Dissipation (W) : 150 W
- Input Capacitance (Ciss) : 1330 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247
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Item Description
MOSFET / SiC - RI15N1200TP ri15n1200tp.pdf
Search Criteria
- Part Number : RI15N1200TP
- Vdss (V) : 1200 V
- Id @ 25C (A) : 15 A
- Total Gate Charge (nQ) typ : 130 nQ
- Maximum Power Dissipation (W) : 150 W
- Input Capacitance (Ciss) : 1330 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-3P
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MOSFET / SiC - RI20N1200TT ri20n1200tt.pdf
Search Criteria
- Part Number : RI20N1200TT
- Vdss (V) : 1200 V
- Id @ 25C (A) : 20 A
- Total Gate Charge (nQ) typ : 345 nQ
- Maximum Power Dissipation (W) : 395 W
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247
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Item Description
MOSFET / SiC - RI25N1200T7 ri25n1200t7.pdf
Search Criteria
- Part Number : RI25N1200T7
- Vdss (V) : 1200 V
- Id @ 25C (A) : 25 A
- Total Gate Charge (nQ) typ : 177 nQ
- Maximum Power Dissipation (W) : 350 W
- Input Capacitance (Ciss) : 1600 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247
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Item Description
MOSFET / SiC - RI25N1200TP ri25n1200tp.pdf
Search Criteria
- Part Number : RI25N1200TP
- Vdss (V) : 1200 V
- Id @ 25C (A) : 25 A
- Total Gate Charge (nQ) typ : 177 nQ
- Maximum Power Dissipation (W) : 350 W
- Input Capacitance (Ciss) : 1600 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-3P
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MOSFET / SiC - RI2N60 ri2n60.pdf
Search Criteria
- Part Number : RI2N60
- Vdss (V) : 600 V
- Id @ 25C (A) : 2.0 A
- Rds-on (typ) (mOhms) : 4000 mOhms
- Total Gate Charge (nQ) typ : 3 nQ
- Maximum Power Dissipation (W) : 45 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 320 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-251
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MOSFET / SiC - RI4N70 ri4n70.pdf
Search Criteria
- Part Number : RI4N70
- Vdss (V) : 700 V
- Id @ 25C (A) : 4.0 A
- Rds-on (typ) (mOhms) : 2800 mOhms
- Total Gate Charge (nQ) typ : 3 nQ
- Maximum Power Dissipation (W) : 106 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 520 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-251
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