Search Results ( 419 products found )
- Item Description
- Search Criteria
- Item Description
-
- MOSFET - RM100N60T2 rm100n60t2.pdf
- Search Criteria
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- Part Number : RM100N60T2
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM100N65DF rm100n65df.pdf
- Search Criteria
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- Part Number : RM100N65DF
- Vdss (V) : 65 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 2.3 mOhms
- Total Gate Charge (nQ) typ : 59 nQ
- Maximum Power Dissipation (W) : 142 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 4780 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM10N100LD rm10n100ld.pdf
- Search Criteria
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- Part Number : RM10N100LD
- Vdss (V) : 100 V
- Id @ 25C (A) : 10.0 A
- Rds-on (typ) (mOhms) : 95 mOhms
- Total Gate Charge (nQ) typ : 21.5 nQ
- Maximum Power Dissipation (W) : 40 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 730 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM10N100S8 rm10n100s8.pdf
- Search Criteria
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- Part Number : RM10N100S8
- Vdss (V) : 100 V
- Id @ 25C (A) : 10.0 A
- Rds-on (typ) (mOhms) : 12 mOhms
- Total Gate Charge (nQ) typ : 27.8 nQ
- Maximum Power Dissipation (W) : 3.1 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 1640 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RM10N40S8 rm10n40s8.pdf
- Search Criteria
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- Part Number : RM10N40S8
- Vdss (V) : 40 V
- Id @ 25C (A) : 10.0 A
- Rds-on (typ) (mOhms) : 15 mOhms
- Total Gate Charge (nQ) typ : 13 nQ
- Maximum Power Dissipation (W) : 2.1 W
- Vgs(th) (typ) : 1.8 V
- Input Capacitance (Ciss) : 1088 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RM110N150HD rm110n150hd.pdf
- Search Criteria
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- Part Number : RM110N150HD
- Vdss (V) : 150 V
- Id @ 25C (A) : 110 A
- Rds-on (typ) (mOhms) : 6.0 mOhms
- Total Gate Charge (nQ) typ : 150 nQ
- Maximum Power Dissipation (W) : 300 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 10000 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-263(D2-PAK)
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM110N85T2 rm110n85t2.pdf
- Search Criteria
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- Part Number : RM110N85T2
- Vdss (V) : 85 V
- Id @ 25C (A) : 110 A
- Rds-on (typ) (mOhms) : 5 mOhms
- Total Gate Charge (nQ) typ : 54 nQ
- Maximum Power Dissipation (W) : 145 W
- Vgs(th) (typ) : 3.3 V
- Input Capacitance (Ciss) : 3870 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM11N800T2 rm11n800ti(t2).pdf
- Search Criteria
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- Part Number : RM11N800T2
- Vdss (V) : 800 V
- Id @ 25C (A) : 11.0 A
- Rds-on (typ) (mOhms) : 420 mOhms
- Total Gate Charge (nQ) typ : 48 nQ
- Maximum Power Dissipation (W) : 188 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 2600 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM11N800TI rm11n800ti(t2).pdf
- Search Criteria
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- Part Number : RM11N800TI
- Vdss (V) : 800 V
- Id @ 25C (A) : 11.0 A
- Rds-on (typ) (mOhms) : 420 mOhms
- Total Gate Charge (nQ) typ : 48 nQ
- Maximum Power Dissipation (W) : 33.8 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 2600 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220F
- Item Description
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- MOSFET - RM120N30DF rm120n30df.pdf
- Search Criteria
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- Part Number : RM120N30DF
- Vdss (V) : 30 V
- Id @ 25C (A) : 120 A
- Rds-on (typ) (mOhms) : 1.95 mOhms
- Total Gate Charge (nQ) typ : 63 nQ
- Maximum Power Dissipation (W) : 75 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 3550 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM120N30T2 rm120n30t2.pdf
- Search Criteria
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- Part Number : RM120N30T2
- Vdss (V) : 30 V
- Id @ 25C (A) : 120 A
- Rds-on (typ) (mOhms) : 3.0 mOhms
- Total Gate Charge (nQ) typ : 48 nQ
- Maximum Power Dissipation (W) : 120 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 3550 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM120N40LDV rm120n40ldv.pdf
- Search Criteria
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- Part Number : RM120N40LDV
- Vdss (V) : 40 V
- Id @ 25C (A) : 85 A
- Rds-on (typ) (mOhms) : 3.6 mOhms
- Total Gate Charge (nQ) typ : 75 nQ
- Maximum Power Dissipation (W) : 120 W
- Vgs(th) (typ) : 1.8 V
- Input Capacitance (Ciss) : 5400 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM120N40T2 rm120n40t2.pdf
- Search Criteria
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- Part Number : RM120N40T2
- Vdss (V) : 40 V
- Id @ 25C (A) : 120 A
- Rds-on (typ) (mOhms) : 3.2 mOhms
- Total Gate Charge (nQ) typ : 75 nQ
- Maximum Power Dissipation (W) : 130 W
- Vgs(th) (typ) : 1.9 V
- Input Capacitance (Ciss) : 5400 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM120N85T2 rm120n85t2.pdf
- Search Criteria
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- Part Number : RM120N85T2
- Vdss (V) : 85 V
- Id @ 25C (A) : 120 A
- Rds-on (typ) (mOhms) : 4.5 mOhms
- Total Gate Charge (nQ) typ : 55 nQ
- Maximum Power Dissipation (W) : 160 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 5500 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM1216 rm1216.pdf
- Search Criteria
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- Part Number : RM1216
- Vdss (V) : 12.0 V
- Id @ 25C (A) : 16.0 A
- Rds-on (typ) (mOhms) : 11.5 mOhms
- Total Gate Charge (nQ) typ : 35 nQ
- Maximum Power Dissipation (W) : 18 W
- Vgs(th) (typ) : 0.7 V
- Input Capacitance (Ciss) : 2700 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN
- Item Description
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- MOSFET - RM12N100LD rm12n100ld.pdf
- Search Criteria
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- Part Number : RM12N100LD
- Vdss (V) : 100 V
- Id @ 25C (A) : 12.0 A
- Total Gate Charge (nQ) typ : 26.2 nQ
- Maximum Power Dissipation (W) : 34.7 W
- Input Capacitance (Ciss) : 1535 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM12N100S8 rm12n100s8.pdf
- Search Criteria
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- Part Number : RM12N100S8
- Vdss (V) : 100 V
- Id @ 25C (A) : 12.0 A
- Rds-on (typ) (mOhms) : 8 mOhms
- Total Gate Charge (nQ) typ : 37.8 nQ
- Maximum Power Dissipation (W) : 3.1 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 2250 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RM12N500T2 rm12n500t2.pdf
- Search Criteria
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- Part Number : RM12N500T2
- Vdss (V) : 500 V
- Id @ 25C (A) : 12.0 A
- Rds-on (typ) (mOhms) : 520 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM12N650HD rm12n650ti(hd)(t2).pdf
- Search Criteria
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- Part Number : RM12N650HD
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-263(D2-PAK)
- Item Description
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- MOSFET - RM12N650IP rm12n650ld(ip).pdf
- Search Criteria
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- Part Number : RM12N650IP
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-251
- Item Description
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- MOSFET - RM12N650LD rm12n650ld(ip).pdf
- Search Criteria
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- Part Number : RM12N650LD
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM12N650T2 rm12n650ti(hd)(t2).pdf
- Search Criteria
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- Part Number : RM12N650T2
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 101 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM12N650TI rm12n650ti(hd)(t2).pdf
- Search Criteria
-
- Part Number : RM12N650TI
- Vdss (V) : 650 V
- Id @ 25C (A) : 11.5 A
- Rds-on (typ) (mOhms) : 360 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 32.6 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 1285 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220F
- Item Description
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- MOSFET - RM12P30S8 rm12p30s8.pdf
- Search Criteria
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- Part Number : RM12P30S8
- Vdss (V) : 30 V
- Id @ 25C (A) : 12.0 A
- Rds-on (typ) (mOhms) : 11.5 mOhms
- Total Gate Charge (nQ) typ : 24 nQ
- Maximum Power Dissipation (W) : 3 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 1750 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RM130N100HD rm130n100hd.pdf
- Search Criteria
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- Part Number : RM130N100HD
- Vdss (V) : 100 V
- Id @ 25C (A) : 130 A
- Rds-on (typ) (mOhms) : 5 mOhms
- Total Gate Charge (nQ) typ : 58.2 nQ
- Maximum Power Dissipation (W) : 120 W
- Vgs(th) (typ) : 2.8 V
- Input Capacitance (Ciss) : 4570 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-263(D2-PAK)
- Certified (AEC-Q101...etc) : AEC-Q101