Search Results ( 560 products found )
- Item Description
- Search Criteria
- Item Description
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- MOSFET - RM003N600ES2 rm003n600es2.pdf
- Search Criteria
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- Part Number : RM003N600ES2
- Vdss (V) : 600 V
- Id @ 25C (A) : 0.03 A
- Rds-on (typ) (mOhms) : 280000 mOhms
- Total Gate Charge (nQ) typ : 1.0 nQ
- Maximum Power Dissipation (W) : 0.3 W
- Input Capacitance (Ciss) : 7.0 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM02P60S2 rm02p60s2.pdf
- Search Criteria
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- Part Number : RM02P60S2
- Vdss (V) : 60 V
- Id @ 25C (A) : 170 A
- Rds-on (typ) (mOhms) : 3300 mOhms
- Total Gate Charge (nQ) typ : 2.5 nQ
- Maximum Power Dissipation (W) : 0.225 W
- Vgs(th) (typ) : 1.4 V
- Input Capacitance (Ciss) : 30 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM03P30D1E rm03p30d1e.pdf
- Search Criteria
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- Part Number : RM03P30D1E
- Vdss (V) : 30 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1700 mOhms
- Total Gate Charge (nQ) typ : 0.55 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 0.7 V
- Input Capacitance (Ciss) : 31 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN1006-3
- Item Description
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- MOSFET - RM03P30S2E rm03p30s2e.pdf
- Search Criteria
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- Part Number : RM03P30S2E
- Vdss (V) : 30 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1700 mOhms
- Total Gate Charge (nQ) typ : 0.55 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 0.7 V
- Input Capacitance (Ciss) : 31 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM04N30S2 rm04n30s2.pdf
- Search Criteria
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- Part Number : RM04N30S2
- Vdss (V) : 30 V
- Id @ 25C (A) : 3.6 A
- Rds-on (typ) (mOhms) : 58 mOhms
- Total Gate Charge (nQ) typ : 4.0 nQ
- Maximum Power Dissipation (W) : 1.7 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 230 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM050N100DF rm050n100df.pdf
- Search Criteria
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- Part Number : RM050N100DF
- Vdss (V) : 100 V
- Id @ 25C (A) : 103 A
- Rds-on (typ) (mOhms) : 4.4 mOhms
- Total Gate Charge (nQ) typ : 27 nQ
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 2990 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM052N100DF rm052n100df.pdf
- Search Criteria
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- Part Number : RM052N100DF
- Vdss (V) : 100 V
- Id @ 25C (A) : 70 A
- Rds-on (typ) (mOhms) : 4.6 mOhms
- Total Gate Charge (nQ) typ : 58.2 nQ
- Maximum Power Dissipation (W) : 142 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 4570 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM08P100S2 rm08p100s2.pdf
- Search Criteria
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- Part Number : RM08P100S2
- Vdss (V) : 100 V
- Id @ 25C (A) : 0.8 A
- Rds-on (typ) (mOhms) : 1000 mOhms
- Total Gate Charge (nQ) typ : 7.8 nQ
- Maximum Power Dissipation (W) : 1.38 W
- Input Capacitance (Ciss) : 325 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM1002 rm1002.pdf
- Search Criteria
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- Part Number : RM1002
- Vdss (V) : 100 V
- Id @ 25C (A) : 2.0 A
- Rds-on (typ) (mOhms) : 112 mOhms
- Total Gate Charge (nQ) typ : 5.2 nQ
- Maximum Power Dissipation (W) : 1.1 W
- Vgs(th) (typ) : 2.0 V
- Input Capacitance (Ciss) : 190 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM100N30DF rm100n30df.pdf
- Search Criteria
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- Part Number : RM100N30DF
- Vdss (V) : 30 V
- Id @ 25C (A) : 100.0 A
- Rds-on (typ) (mOhms) : 1.9 mOhms
- Total Gate Charge (nQ) typ : 38 nQ
- Maximum Power Dissipation (W) : 65 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 5000 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM100N40DF rm100n40df.pdf
- Search Criteria
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- Part Number : RM100N40DF
- Vdss (V) : 40 V
- Id @ 25C (A) : 100.0 A
- Rds-on (typ) (mOhms) : 3.0 mOhms
- Total Gate Charge (nQ) typ : 90 nQ
- Maximum Power Dissipation (W) : 65 W
- Vgs(th) (typ) : 1.9 V
- Input Capacitance (Ciss) : 5000 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM100N60AT2 rm100n60at2.pdf
- Search Criteria
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- Part Number : RM100N60AT2
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 2 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM100N60BT2 rm100n60bt2.pdf
- Search Criteria
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- Part Number : RM100N60BT2
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 6.3 mOhms
- Total Gate Charge (nQ) typ : 81 nQ
- Maximum Power Dissipation (W) : 167 W
- Vgs(th) (typ) : 3.0 V
- Input Capacitance (Ciss) : 4382 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM100N60DF rm100n60df.pdf
- Search Criteria
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- Part Number : RM100N60DF
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM100N60DFV rm100n60dfv.pdf
- Search Criteria
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- Part Number : RM100N60DFV
- Vdss (V) : 65 V
- Id @ 25C (A) : 95 A
- Rds-on (typ) (mOhms) : 3.8 mOhms
- Total Gate Charge (nQ) typ : 41 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 1978 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM100N60HD rm100n60hd.pdf
- Search Criteria
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- Part Number : RM100N60HD
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 3.0 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-263(D2-PAK)
- Item Description
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- MOSFET - RM100N60LD rm100n60ld.pdf
- Search Criteria
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- Part Number : RM100N60LD
- Vdss (V) : 65 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 4.8 mOhms
- Total Gate Charge (nQ) typ : 36 nQ
- Maximum Power Dissipation (W) : 50 W
- Input Capacitance (Ciss) : 2007 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM100N60T2 rm100n60t2.pdf
- Search Criteria
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- Part Number : RM100N60T2
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM100N60T7 rm100n60t7.pdf
- Search Criteria
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- Part Number : RM100N60T7
- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM100N65DF rm100n65df.pdf
- Search Criteria
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- Part Number : RM100N65DF
- Vdss (V) : 65 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 2.3 mOhms
- Total Gate Charge (nQ) typ : 59 nQ
- Maximum Power Dissipation (W) : 142 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 4780 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Item Description
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- MOSFET - RM10N100LD rm10n100ld.pdf
- Search Criteria
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- Part Number : RM10N100LD
- Vdss (V) : 100 V
- Id @ 25C (A) : 10.0 A
- Rds-on (typ) (mOhms) : 95 mOhms
- Total Gate Charge (nQ) typ : 21.5 nQ
- Maximum Power Dissipation (W) : 40 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 730 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM10N100S8 rm10n100s8.pdf
- Search Criteria
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- Part Number : RM10N100S8
- Vdss (V) : 100 V
- Id @ 25C (A) : 10.0 A
- Rds-on (typ) (mOhms) : 12 mOhms
- Total Gate Charge (nQ) typ : 27.8 nQ
- Maximum Power Dissipation (W) : 3.1 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 1640 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RM10N30D2 rm10n30d2.pdf
- Search Criteria
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- Part Number : RM10N30D2
- Vdss (V) : 30 V
- Id @ 25C (A) : 10.0 A
- Rds-on (typ) (mOhms) : 8 mOhms
- Total Gate Charge (nQ) typ : 11.3 nQ
- Maximum Power Dissipation (W) : 0.73 W
- Input Capacitance (Ciss) : 1415 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : PQFN2x2
- Item Description
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- MOSFET - RM10N40S8 rm10n40s8.pdf
- Search Criteria
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- Part Number : RM10N40S8
- Vdss (V) : 40 V
- Id @ 25C (A) : 10.0 A
- Rds-on (typ) (mOhms) : 15 mOhms
- Total Gate Charge (nQ) typ : 13 nQ
- Maximum Power Dissipation (W) : 2.1 W
- Vgs(th) (typ) : 1.8 V
- Input Capacitance (Ciss) : 1088 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RM10N600LD rm10n600ld.pdf
- Search Criteria
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- Part Number : RM10N600LD
- Vdss (V) : 600 V
- Id @ 25C (A) : 10.2 A
- Rds-on (typ) (mOhms) : 268 mOhms
- Total Gate Charge (nQ) typ : 17.9 nQ
- Maximum Power Dissipation (W) : 67.9 W
- Vgs(th) (typ) : 3.3 V
- Input Capacitance (Ciss) : 420 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-252(D-PAK)