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You are in MOSFET
Vdss (V)
Id @ 25C (A)
Rds-on (typ) (mOhms)
Total Gate Charge (nQ) typ
Maximum Power Dissipation (W)
Input Capacitance (Ciss)
Polarity
Mounting Style
Package / Case
Certified (AEC-Q101...etc)
Search Results ( 302 products found )
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  • Item Description
  • RM45N600T7
  • MOSFET - RM45N600T7 rm45n600t7(t2).pdf
  • Search Criteria
    • Part Number : RM45N600T7
    • Vdss (V) : 600 V
    • Id @ 25C (A) : 44.5 A
    • Rds-on (typ) (mOhms) : 75 mOhms
    • Total Gate Charge (nQ) typ : 69 nQ
    • Maximum Power Dissipation (W) : 431 W
    • Vgs(th) (typ) : 3 V
    • Input Capacitance (Ciss) : 2808 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-247
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  • Item Description
  • RM45N600T2
  • MOSFET - RM45N600T2 rm45n600t7(t2).pdf
  • Search Criteria
    • Part Number : RM45N600T2
    • Vdss (V) : 600 V
    • Id @ 25C (A) : 44.5 A
    • Rds-on (typ) (mOhms) : 75 mOhms
    • Total Gate Charge (nQ) typ : 69 nQ
    • Maximum Power Dissipation (W) : 50 W
    • Vgs(th) (typ) : 3 V
    • Input Capacitance (Ciss) : 2808 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-220
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  • Item Description
  • RI20N1200TT
  • MOSFET - RI20N1200TT ri20n1200tt.pdf
  • Search Criteria
    • Part Number : RI20N1200TT
    • Vdss (V) : 1200 V
    • Id @ 25C (A) : 20 A
    • Total Gate Charge (nQ) typ : 345 nQ
    • Maximum Power Dissipation (W) : 395 W
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-247
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  • Item Description
  • RI15N1200TP
  • MOSFET - RI15N1200TP ri15n1200tp.pdf
  • Search Criteria
    • Part Number : RI15N1200TP
    • Vdss (V) : 1200 V
    • Id @ 25C (A) : 15 A
    • Total Gate Charge (nQ) typ : 130 nQ
    • Maximum Power Dissipation (W) : 150 W
    • Input Capacitance (Ciss) : 1330 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-3P
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  • Item Description
  • RI25N1200TP
  • MOSFET - RI25N1200TP ri25n1200tp.pdf
  • Search Criteria
    • Part Number : RI25N1200TP
    • Vdss (V) : 1200 V
    • Id @ 25C (A) : 25 A
    • Total Gate Charge (nQ) typ : 177 nQ
    • Maximum Power Dissipation (W) : 350 W
    • Input Capacitance (Ciss) : 1600 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-3P
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  • Item Description
  • RM50P30D3
  • MOSFET - RM50P30D3 rm50p30d3.pdf
  • Search Criteria
    • Part Number : RM50P30D3
    • Vdss (V) : 30 V
    • Id @ 25C (A) : 50 A
    • Rds-on (typ) (mOhms) : 7.3 mOhms
    • Total Gate Charge (nQ) typ : 30 nQ
    • Maximum Power Dissipation (W) : 38 W
    • Input Capacitance (Ciss) : 3448 pF
    • Polarity : P-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : DFN3X3
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  • Item Description
  • RM60P60HD
  • MOSFET - RM60P60HD rm60p60hd.pdf
  • Search Criteria
    • Part Number : RM60P60HD
    • Vdss (V) : 60 V
    • Id @ 25C (A) : 61 A
    • Rds-on (typ) (mOhms) : 18 mOhms
    • Total Gate Charge (nQ) typ : 37.2 nQ
    • Maximum Power Dissipation (W) : 171 W
    • Vgs(th) (typ) : 3.0 V
    • Input Capacitance (Ciss) : 2165 pF
    • Polarity : P-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-263-2L
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  • Item Description
  • RM48N100D3
  • MOSFET - RM48N100D3 rm48n100d3.pdf
  • Search Criteria
    • Part Number : RM48N100D3
    • Vdss (V) : 100V
    • Id @ 25C (A) : 48 A
    • Rds-on (typ) (mOhms) : 11.3 mOhms
    • Total Gate Charge (nQ) typ : 27.8 nQ
    • Maximum Power Dissipation (W) : 61 W
    • Vgs(th) (typ) : 1.5 V
    • Input Capacitance (Ciss) : 1640 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : DFN3x3
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  • Item Description
  • RM150N100AT2
  • MOSFET - RM150N100AT2 rm150n100at2.pdf
  • Search Criteria
    • Part Number : RM150N100AT2
    • Vdss (V) : 100V
    • Id @ 25C (A) : 150 A
    • Rds-on (typ) (mOhms) : 3.5 mOhms
    • Total Gate Charge (nQ) typ : 110 nQ
    • Maximum Power Dissipation (W) : 275 W
    • Vgs(th) (typ) : 1.5 V
    • Input Capacitance (Ciss) : 6680pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-220-3L
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  • Item Description
  • RM60P60T2
  • MOSFET - RM60P60T2 rm60p60t2.pdf
  • Search Criteria
    • Part Number : RM60P60T2
    • Vdss (V) : 60 V
    • Id @ 25C (A) : 61 A
    • Rds-on (typ) (mOhms) : 18 mOhms
    • Total Gate Charge (nQ) typ : 37.2 nQ
    • Maximum Power Dissipation (W) : 171 W
    • Vgs(th) (typ) : 3.0 V
    • Input Capacitance (Ciss) : 2165 pF
    • Polarity : P-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-220
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  • Item Description
  • BSS127
  • MOSFET - BSS127 bss127.pdf
  • Search Criteria
    • Part Number : BSS127
    • Vdss (V) : 600 V
    • Id @ 25C (A) : 0.021 A
    • Rds-on (typ) (mOhms) : 310 Ohms
    • Total Gate Charge (nQ) typ : 0.07 nQ
    • Maximum Power Dissipation (W) : 0.5 W
    • Vgs(th) (typ) : 2.0 V
    • Input Capacitance (Ciss) : 21 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT-23
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  • Item Description
  • RM03P30S2E
  • MOSFET - RM03P30S2E rm03p30s2e.pdf
  • Search Criteria
    • Part Number : RM03P30S2E
    • Vdss (V) : 30 V
    • Id @ 25C (A) : 0.3 A
    • Rds-on (typ) (mOhms) : 1700 mOhms
    • Total Gate Charge (nQ) typ : 0.55 nQ
    • Maximum Power Dissipation (W) : 0.35 W
    • Vgs(th) (typ) : 0.7 V
    • Input Capacitance (Ciss) : 31 pF
    • Polarity : P-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT-23-3L
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  • Item Description
  • RM27P30LD
  • MOSFET - RM27P30LD rm27p30ld.pdf
  • Search Criteria
    • Part Number : RM27P30LD
    • Vdss (V) : 30 V
    • Id @ 25C (A) : 27 A
    • Total Gate Charge (nQ) typ : 9.8 nQ
    • Maximum Power Dissipation (W) : 31.3 W
    • Input Capacitance (Ciss) : 930 pF
    • Polarity : P-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-252-2L
    • Certified (AEC-Q101...etc) : AEC-Q101
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  • Item Description
  • RM4P30S6
  • MOSFET - RM4P30S6 rm4p30s6.pdf
  • Search Criteria
    • Part Number : RM4P30S6
    • Vdss (V) : 30 V
    • Id @ 25C (A) : 4.2 A
    • Rds-on (typ) (mOhms) : 47 mOhms
    • Total Gate Charge (nQ) typ : 8.5 nQ
    • Maximum Power Dissipation (W) : 1.2 W
    • Vgs(th) (typ) : 1 V
    • Input Capacitance (Ciss) : 880 pF
    • Polarity : P-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT-23-6L
    • Certified (AEC-Q101...etc) : AEC-Q101
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  • Item Description
  • RM18P100HDE
  • MOSFET - RM18P100HDE rm18p100hde.pdf
  • Search Criteria
    • Part Number : RM18P100HDE
    • Vdss (V) : 100 V
    • Id @ 25C (A) : 18 A
    • Rds-on (typ) (mOhms) : 85 mOhms
    • Total Gate Charge (nQ) typ : 61 nQ
    • Maximum Power Dissipation (W) : 70 W
    • Vgs(th) (typ) : 1.9 V
    • Input Capacitance (Ciss) : 1300 pF
    • Polarity : P-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : TO-263-2L
    • Certified (AEC-Q101...etc) : AEC-Q101
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  • Item Description
  • RM80N100T2
  • MOSFET - RM80N100T2 rm80n100t2.pdf
  • Search Criteria
    • Part Number : RM80N100T2
    • Vdss (V) : 100 V
    • Id @ 25C (A) : 80 A
    • Rds-on (typ) (mOhms) : 7.2 mOhms
    • Total Gate Charge (nQ) typ : 65 nQ
    • Maximum Power Dissipation (W) : 125 W
    • Vgs(th) (typ) : 1.7 V
    • Input Capacitance (Ciss) : 4200 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-220-3L
    • Certified (AEC-Q101...etc) : AEC-Q101
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  • Item Description
  • RM150N100AHD
  • MOSFET - RM150N100AHD rm150n100ahd.pdf
  • Search Criteria
    • Part Number : RM150N100AHD
    • Vdss (V) : 100 V
    • Id @ 25C (A) : 150 A
    • Rds-on (typ) (mOhms) : 3.5 mOhms
    • Total Gate Charge (nQ) typ : 110 nQ
    • Maximum Power Dissipation (W) : 275 W
    • Vgs(th) (typ) : 1.5 V
    • Input Capacitance (Ciss) : 6680 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-263-2L
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  • Item Description
  • RM12N100LD
  • MOSFET - RM12N100LD rm12n100ld.pdf
  • Search Criteria
    • Part Number : RM12N100LD
    • Vdss (V) : 100 V
    • Id @ 25C (A) : 12 A
    • Total Gate Charge (nQ) typ : 26.2 nQ
    • Maximum Power Dissipation (W) : 34.7 W
    • Input Capacitance (Ciss) : 1535 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-252-2L
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  • Item Description
  • RM2A8N60S4
  • MOSFET - RM2A8N60S4 rm2a8n60s4.pdf
  • Search Criteria
    • Part Number : RM2A8N60S4
    • Vdss (V) : 60 V
    • Id @ 25C (A) : 2.8 A
    • Rds-on (typ) (mOhms) : 80 mOhms
    • Total Gate Charge (nQ) typ : 5 nQ
    • Maximum Power Dissipation (W) : 1.5 W
    • Input Capacitance (Ciss) : 511 pF
    • Polarity : N-Channel
    • Package / Case : SOT-223
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  • Item Description
  • RM3404
  • MOSFET - RM3404 rm3404.pdf
  • Search Criteria
    • Part Number : RM3404
    • Vdss (V) : 30 V
    • Id @ 25C (A) : 5.8 A
    • Rds-on (typ) (mOhms) : 25.5 mOhms
    • Total Gate Charge (nQ) typ : 5.2 nQ
    • Maximum Power Dissipation (W) : 1.4 W
    • Vgs(th) (typ) : 1.6 V
    • Input Capacitance (Ciss) : 255 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT-23
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  • Item Description
  • RM5N40S2
  • MOSFET - RM5N40S2 rm5n40s2.pdf
  • Search Criteria
    • Part Number : RM5N40S2
    • Vdss (V) : 40 V
    • Id @ 25C (A) : 5.0 A
    • Total Gate Charge (nQ) typ : 5.5 nQ
    • Maximum Power Dissipation (W) : 1.25 W
    • Input Capacitance (Ciss) : 593 pF
    • Polarity : N-Channel
    • Mounting Style : SMD/SMT
    • Package / Case : SOT-23
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  • Item Description
  • RMP12N65IP
  • MOSFET - RMP12N65IP rmp12n65ld(ip)(ti)(t2).pdf
  • Search Criteria
    • Part Number : RMP12N65IP
    • Vdss (V) : 650 V
    • Id @ 25C (A) : 12.0 A
    • Rds-on (typ) (mOhms) : 650 mOhms
    • Total Gate Charge (nQ) typ : 42 nQ
    • Maximum Power Dissipation (W) : 225 W
    • Input Capacitance (Ciss) : 1480 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-251
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  • Item Description
  • RMP12N65LD
  • MOSFET - RMP12N65LD rmp12n65ld(ip)(ti)(t2).pdf
  • Search Criteria
    • Part Number : RMP12N65LD
    • Vdss (V) : 650 V
    • Id @ 25C (A) : 12.0 A
    • Rds-on (typ) (mOhms) : 650 mOhms
    • Total Gate Charge (nQ) typ : 42 nQ
    • Maximum Power Dissipation (W) : 225 W
    • Input Capacitance (Ciss) : 1480 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-252
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  • Item Description
  • RMP12N65TI
  • MOSFET - RMP12N65TI rmp12n65ld(ip)(ti)(t2).pdf
  • Search Criteria
    • Part Number : RMP12N65TI
    • Vdss (V) : 650 V
    • Id @ 25C (A) : 12.0 A
    • Rds-on (typ) (mOhms) : 650 mOhms
    • Total Gate Charge (nQ) typ : 42 nQ
    • Maximum Power Dissipation (W) : 51 W
    • Input Capacitance (Ciss) : 1480 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-220F
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  • Item Description
  • RMP12N65T2
  • MOSFET - RMP12N65T2 rmp12n65ld(ip)(ti)(t2).pdf
  • Search Criteria
    • Part Number : RMP12N65T2
    • Vdss (V) : 650 V
    • Id @ 25C (A) : 12.0 A
    • Rds-on (typ) (mOhms) : 650 mOhms
    • Total Gate Charge (nQ) typ : 42 nQ
    • Maximum Power Dissipation (W) : 225 W
    • Input Capacitance (Ciss) : 1480 pF
    • Polarity : N-Channel
    • Mounting Style : Through Hole
    • Package / Case : TO-220
    View Details