Search Results ( 560 products found )
- Item Description
- Search Criteria
- Item Description
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- MOSFET - RSM60N120T4L rsm60n120t4l.pdf
- Search Criteria
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- Part Number : RSM60N120T4L
- Vdss (V) : 1200 V
- Id @ 25C (A) : 60 A
- Rds-on (typ) (mOhms) : 40 mOhms
- Total Gate Charge (nQ) typ : 37 nQ
- Maximum Power Dissipation (W) : 330 W
- Vgs(th) (typ) : 2.5 V
- Input Capacitance (Ciss) : 2946 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247-4
- Item Description
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- MOSFET - RM130N150HD rm130n150hd.pdf
- Search Criteria
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- Part Number : RM130N150HD
- Vdss (V) : 150 V
- Id @ 25C (A) : 130 A
- Rds-on (typ) (mOhms) : 7.0 mOhms
- Total Gate Charge (nQ) typ : 144 nQ
- Maximum Power Dissipation (W) : 310 W
- Vgs(th) (typ) : 3.5 V
- Input Capacitance (Ciss) : 8910 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-263(D2-PAK)
- Item Description
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- MOSFET - RM180N100AT2V rm180n100at2v.pdf
- Search Criteria
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- Part Number : RM180N100AT2V
- Vdss (V) : 100 V
- Id @ 25C (A) : 180 A
- Rds-on (typ) (mOhms) : 2.5 mOhms
- Total Gate Charge (nQ) typ : 106 nQ
- Maximum Power Dissipation (W) : 341 W
- Vgs(th) (typ) : 3.0 V
- Input Capacitance (Ciss) : 7684 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RBSS84 rbss84.pdf
- Search Criteria
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- Part Number : RBSS84
- Vdss (V) : 50 V
- Id @ 25C (A) : 0.13 A
- Rds-on (typ) (mOhms) : 5000 mOhms
- Maximum Power Dissipation (W) : 0.225 W
- Input Capacitance (Ciss) : 38 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM110N100BT2 rm110n100bt2.pdf
- Search Criteria
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- Part Number : RM110N100BT2
- Vdss (V) : 100 V
- Id @ 25C (A) : 110 A
- Rds-on (typ) (mOhms) : 3.5 mOhms
- Total Gate Charge (nQ) typ : 65 nQ
- Maximum Power Dissipation (W) : 80 W
- Vgs(th) (typ) : 3.0 V
- Input Capacitance (Ciss) : 5040 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Item Description
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- MOSFET - RM4P20S6V rm4p20s6v.pdf
- Search Criteria
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- Part Number : RM4P20S6V
- Vdss (V) : 20 V
- Id @ 25C (A) : 4.1 A
- Rds-on (typ) (mOhms) : 39 mOhms
- Total Gate Charge (nQ) typ : 7.8 nQ
- Maximum Power Dissipation (W) : 1.7 W
- Vgs(th) (typ) : 0.7 V
- Input Capacitance (Ciss) : 740 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23-6L
- Item Description
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- MOSFET - RM400N40TL rm400n40tl.pdf
- Search Criteria
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- Part Number : RM400N40TL
- Vdss (V) : 40 V
- Id @ 25C (A) : 400 A
- Rds-on (typ) (mOhms) : 0.45 mOhms
- Total Gate Charge (nQ) typ : 191 nQ
- Maximum Power Dissipation (W) : 300 W
- Input Capacitance (Ciss) : 10505 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TOLL-8L
- Item Description
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- MOSFET - RM5P40S2 rm5p40s2.pdf
- Search Criteria
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- Part Number : RM5P40S2
- Vdss (V) : 40 V
- Id @ 25C (A) : 5.0 A
- Rds-on (typ) (mOhms) : 65 mOhms
- Total Gate Charge (nQ) typ : 14 nQ
- Maximum Power Dissipation (W) : 2.0 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 596 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM5P40S2V rm5p40s2v.pdf
- Search Criteria
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- Part Number : RM5P40S2V
- Vdss (V) : 40 V
- Id @ 25C (A) : 5.0 A
- Rds-on (typ) (mOhms) : 65 mOhms
- Total Gate Charge (nQ) typ : 14 nQ
- Maximum Power Dissipation (W) : 2.0 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 596 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM5A3P60S6 rm5a3p60s6.pdf
- Search Criteria
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- Part Number : RM5A3P60S6
- Vdss (V) : 60 V
- Id @ 25C (A) : 5.3 A
- Rds-on (typ) (mOhms) : 79 mOhms
- Total Gate Charge (nQ) typ : 16 nQ
- Maximum Power Dissipation (W) : 5.0 W
- Vgs(th) (typ) : 2.0 V
- Input Capacitance (Ciss) : 934 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23-6
- Item Description
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- MOSFET - RM50P60ALD rm50p60ald.pdf
- Search Criteria
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- Part Number : RM50P60ALD
- Vdss (V) : 60 V
- Id @ 25C (A) : 50 A
- Rds-on (typ) (mOhms) : 23 mOhms
- Total Gate Charge (nQ) typ : 75 nQ
- Maximum Power Dissipation (W) : 95 W
- Vgs(th) (typ) : 2.0 V
- Input Capacitance (Ciss) : 6460 pF
- Polarity : P-Channel
- Mounting Style : Through Hole
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM75N60ALD rm75n60ald.pdf
- Search Criteria
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- Part Number : RM75N60ALD
- Vdss (V) : 60 V
- Id @ 25C (A) : 75 A
- Rds-on (typ) (mOhms) : 9.1 mOhms
- Total Gate Charge (nQ) typ : 50 nQ
- Maximum Power Dissipation (W) : 110 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 2350 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RM2316 rm2316.pdf
- Search Criteria
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- Part Number : RM2316
- Vdss (V) : 30 V
- Id @ 25C (A) : 4.0 A
- Rds-on (typ) (mOhms) : 31 mOhms
- Total Gate Charge (nQ) typ : 3 nQ
- Maximum Power Dissipation (W) : 1.1 W
- Vgs(th) (typ) : 0.9 V
- Input Capacitance (Ciss) : 233 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Item Description
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- MOSFET - RM12P30AS8 rm12p30as8.pdf
- Search Criteria
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- Part Number : RM12P30AS8
- Vdss (V) : 30 V
- Id @ 25C (A) : 12.0 A
- Rds-on (typ) (mOhms) : 10.5 mOhms
- Total Gate Charge (nQ) typ : 54.8 nQ
- Maximum Power Dissipation (W) : 3.7 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 2863 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RMD8P20S8 rmd8p20s8.pdf
- Search Criteria
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- Part Number : RMD8P20S8
- Vdss (V) : 20 V
- Id @ 25C (A) : 8.0 A
- Rds-on (typ) (mOhms) : 17 mOhms
- Total Gate Charge (nQ) typ : 19.5 nQ
- Maximum Power Dissipation (W) : 3 W
- Vgs(th) (typ) : 0.65 V
- Input Capacitance (Ciss) : 1730 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOP-8
- Item Description
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- MOSFET - RMP3N80LD rmp3n80ld.pdf
- Search Criteria
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- Part Number : RMP3N80LD
- Vdss (V) : 800 V
- Id @ 25C (A) : 3.0 A
- Rds-on (typ) (mOhms) : 3800 mOhms
- Total Gate Charge (nQ) typ : 9 nQ
- Maximum Power Dissipation (W) : 80 W
- Input Capacitance (Ciss) : 390.3 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-252(D-PAK)
- Item Description
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- MOSFET - RMD2060S6 rmd2060s6.pdf
- Search Criteria
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- Part Number : RMD2060S6
- Vdss (V) : 20 V
- Id @ 25C (A) : 2.8 A
- Rds-on (typ) (mOhms) : 45 mOhms
- Total Gate Charge (nQ) typ : 2.7 nQ
- Maximum Power Dissipation (W) : 0.77 W
- Vgs(th) (typ) : 0.7 V
- Input Capacitance (Ciss) : 184 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23-6L
- Item Description
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- MOSFET - 2N7002KBS3 2n7002kbs3.pdf
- Search Criteria
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- Part Number : 2N7002KBS3
- Vdss (V) : 60 V
- Id @ 25C (A) : 0.2 A
- Total Gate Charge (nQ) typ : 0.3 nQ
- Maximum Power Dissipation (W) : 0.2 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 30 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-323
- Item Description
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- MOSFET - RM5N40S2V rm5n40s2v.pdf
- Search Criteria
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- Part Number : RM5N40S2V
- Vdss (V) : 40 V
- Id @ 25C (A) : 5.0 A
- Total Gate Charge (nQ) typ : 5.5 nQ
- Maximum Power Dissipation (W) : 1.25 W
- Input Capacitance (Ciss) : 593 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM20N60LDV rm20n60ldv.pdf
- Search Criteria
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- Part Number : RM20N60LDV
- Vdss (V) : 60 V
- Id @ 25C (A) : 20 A
- Rds-on (typ) (mOhms) : 35 mOhms
- Total Gate Charge (nQ) typ : 47 nQ
- Maximum Power Dissipation (W) : 45 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 500 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252(D-PAK)
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM25P60D3V rm25p60d3v.pdf
- Search Criteria
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- Part Number : RM25P60D3V
- Vdss (V) : 60 V
- Id @ 25C (A) : 25 A
- Rds-on (typ) (mOhms) : 50 mOhms
- Total Gate Charge (nQ) typ : 23 nQ
- Maximum Power Dissipation (W) : 35 W
- Vgs(th) (typ) : 1.5 V
- Input Capacitance (Ciss) : 1408 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : PDFN3X3
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM50N60DFV rm50n60dfv.pdf
- Search Criteria
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- Part Number : RM50N60DFV
- Vdss (V) : 60 V
- Id @ 25C (A) : 50 A
- Rds-on (typ) (mOhms) : 65 mOhms
- Total Gate Charge (nQ) typ : 90.3 nQ
- Maximum Power Dissipation (W) : 75 W
- Vgs(th) (typ) : 1.3 V
- Input Capacitance (Ciss) : 4000 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM80P40LDV rm80p40ldv.pdf
- Search Criteria
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- Part Number : RM80P40LDV
- Vdss (V) : 40 V
- Id @ 25C (A) : 80 A
- Rds-on (typ) (mOhms) : 5.8 mOhms
- Total Gate Charge (nQ) typ : 84 nQ
- Maximum Power Dissipation (W) : 74 W
- Vgs(th) (typ) : 1.6 V
- Input Capacitance (Ciss) : 5400 pF
- Polarity : P-Channel
- Mounting Style : Through Hole
- Package / Case : TO-252(D-PAK)
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM90N30LDV rm90n30ldv.pdf
- Search Criteria
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- Part Number : RM90N30LDV
- Vdss (V) : 30 V
- Id @ 25C (A) : 90 A
- Rds-on (typ) (mOhms) : 4.1 mOhms
- Total Gate Charge (nQ) typ : 60 nQ
- Maximum Power Dissipation (W) : 105 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 3433 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : TO-252(D-PAK)
- Certified (AEC-Q101...etc) : AEC-Q101
- Item Description
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- MOSFET - RM3205V rm3205v.pdf
- Search Criteria
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- Part Number : RM3205V
- Vdss (V) : 55 V
- Id @ 25C (A) : 110 A
- Total Gate Charge (nQ) typ : 97 nQ
- Maximum Power Dissipation (W) : 187.5 W
- Input Capacitance (Ciss) : 3900 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-220
- Certified (AEC-Q101...etc) : AEC-Q101