A Discrete Semiconductor Manufacturer
2N4150

Transistors - 2N4150

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Package / Case : TO-39
  • Mounting Style : Through Hole
  • Power Rating : 1.0 W
  • Transistor Polarity : NPN
  • VCEO : 70 V
  • VCBO : 100 V
  • VEBO : 7 V
  • Max Collector Current : 10.0 A
  • DC Collector/Base Gain hfe Min : 50
  • DC Current Gain hFE Max : 200