MOSFET - RG100N650T7
Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.
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- Vdss (V) : 650 V
- Id @ 25C (A) : 100 A
- Total Gate Charge (nQ) typ : 280 nQ
- Maximum Power Dissipation (W) : 428 W
- Vgs(th) (typ) : 1.7 V
- Input Capacitance (Ciss) : 6900 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247
