MOSFET - RI20N1200TT

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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• Vdss (V) : 1200 V
• Id @ 25C (A) : 20 A
• Total Gate Charge (nQ) typ : 345 nQ
• Maximum Power Dissipation (W) : 395 W
• Polarity : N-Channel
• Mounting Style : Through Hole
• Package / Case : TO-247