MOSFET - RI25N1200T7
Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.
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- Vdss (V) : 1200 V
- Id @ 25C (A) : 25 A
- Total Gate Charge (nQ) typ : 177 nQ
- Maximum Power Dissipation (W) : 350 W
- Input Capacitance (Ciss) : 1600 pF
- Polarity : N-Channel
- Mounting Style : Through Hole
- Package / Case : TO-247
