MOSFET - RI4N70

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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• Vdss (V) : 700 V
• Id @ 25C (A) : 4.0 A
• Rds-on (typ) (mOhms) : 2800 mOhms
• Total Gate Charge (nQ) typ : 3 nQ
• Maximum Power Dissipation (W) : 106 W
• Vgs(th) (typ) : 3 V
• Input Capacitance (Ciss) : 520 pF
• Polarity : N-Channel
• Mounting Style : Through Hole
• Package / Case : TO-251