A Discrete Semiconductor Manufacturer
RM03P30D1E

MOSFET - RM03P30D1E

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Vdss (V) : 30 V
  • Id @ 25C (A) : 0.3 A
  • Rds-on (typ) (mOhms) : 1700 mOhms
  • Total Gate Charge (nQ) typ : 0.55 nQ
  • Maximum Power Dissipation (W) : 0.35 W
  • Vgs(th) (typ) : 0.7 V
  • Input Capacitance (Ciss) : 31 pF
  • Polarity : P-Channel
  • Mounting Style : SMD/SMT
  • Package / Case : DFN1006-3