MOSFET - RM03P30S2E
Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.
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- Vdss (V) : 30 V
- Id @ 25C (A) : 0.3 A
- Rds-on (typ) (mOhms) : 1700 mOhms
- Total Gate Charge (nQ) typ : 0.55 nQ
- Maximum Power Dissipation (W) : 0.35 W
- Vgs(th) (typ) : 0.7 V
- Input Capacitance (Ciss) : 31 pF
- Polarity : P-Channel
- Mounting Style : SMD/SMT
- Package / Case : SOT-23
