A Discrete Semiconductor Manufacturer
RM052N100DF

MOSFET - RM052N100DF

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

Please click "back to search" button to return to your search results.

  • Vdss (V) : 100 V
  • Id @ 25C (A) : 70 A
  • Rds-on (typ) (mOhms) : 4.6 mOhms
  • Total Gate Charge (nQ) typ : 58.2 nQ
  • Maximum Power Dissipation (W) : 142 W
  • Vgs(th) (typ) : 1.6 V
  • Input Capacitance (Ciss) : 4570 pF
  • Polarity : N-Channel
  • Mounting Style : SMD/SMT
  • Package / Case : DFN5X6-8L