MOSFET - RM100N60DF
Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.
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- Vdss (V) : 60 V
- Id @ 25C (A) : 100 A
- Rds-on (typ) (mOhms) : 5.7 mOhms
- Total Gate Charge (nQ) typ : 85 nQ
- Maximum Power Dissipation (W) : 170 W
- Vgs(th) (typ) : 3 V
- Input Capacitance (Ciss) : 4800 pF
- Polarity : N-Channel
- Mounting Style : SMD/SMT
- Package / Case : DFN5X6-8L
