MOSFET - RM100N60DFV

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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• Vdss (V) : 65 V
• Id @ 25C (A) : 95 A
• Rds-on (typ) (mOhms) : 3.8 mOhms
• Total Gate Charge (nQ) typ : 41 nQ
• Maximum Power Dissipation (W) : 170 W
• Vgs(th) (typ) : 1.6 V
• Input Capacitance (Ciss) : 1978 pF
• Polarity : N-Channel
• Mounting Style : SMD/SMT
• Package / Case : DFN5X6-8L
• Certified (AEC-Q101...etc) : AEC-Q101