A Discrete Semiconductor Manufacturer
RM12N100S8

MOSFET - RM12N100S8

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Vdss (V) : 100 V
  • Id @ 25C (A) : 12.0 A
  • Rds-on (typ) (mOhms) : 8 mOhms
  • Total Gate Charge (nQ) typ : 37.8 nQ
  • Maximum Power Dissipation (W) : 3.1 W
  • Vgs(th) (typ) : 1.6 V
  • Input Capacitance (Ciss) : 2250 pF
  • Polarity : N-Channel
  • Mounting Style : SMD/SMT
  • Package / Case : SOP-8