MOSFET - RM12P30AS8

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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• Vdss (V) : 30 V
• Id @ 25C (A) : 12.0 A
• Rds-on (typ) (mOhms) : 10.5 mOhms
• Total Gate Charge (nQ) typ : 54.8 nQ
• Maximum Power Dissipation (W) : 3.7 W
• Vgs(th) (typ) : 1.5 V
• Input Capacitance (Ciss) : 2863 pF
• Polarity : P-Channel
• Mounting Style : SMD/SMT
• Package / Case : SOP-8