A Discrete Semiconductor Manufacturer
RM1A2N20ES2

MOSFET - RM1A2N20ES2

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Vdss (V) : 20 V
  • Id @ 25C (A) : 1.2 A
  • Rds-on (typ) (mOhms) : 120 mOhms
  • Total Gate Charge (nQ) typ : 1.6 nQ
  • Maximum Power Dissipation (W) : 0.42 W
  • Vgs(th) (typ) : 0.75 V
  • Input Capacitance (Ciss) : 60 pF
  • Polarity : N-Channel
  • Mounting Style : SMD/SMT
  • Package / Case : SOT-23