A Discrete Semiconductor Manufacturer
RM2312

MOSFET - RM2312

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Vdss (V) : 20 V
  • Id @ 25C (A) : 4.5 A
  • Rds-on (typ) (mOhms) : 21 mOhms
  • Total Gate Charge (nQ) typ : 10 nQ
  • Maximum Power Dissipation (W) : 1.25 W
  • Vgs(th) (typ) : 0.65 V
  • Input Capacitance (Ciss) : 500 pF
  • Polarity : N-Channel
  • Mounting Style : SMD/SMT
  • Package / Case : SOT-23
  • Certified (AEC-Q101...etc) : AEC-Q101