A Discrete Semiconductor Manufacturer
RM2333A

MOSFET - RM2333A

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

Please click "back to search" button to return to your search results.

  • Vdss (V) : 12.0 V
  • Id @ 25C (A) : 6.0 A
  • Rds-on (typ) (mOhms) : 19 mOhms
  • Total Gate Charge (nQ) typ : 11.5 nQ
  • Maximum Power Dissipation (W) : 1.8 W
  • Vgs(th) (typ) : 0.65 V
  • Input Capacitance (Ciss) : 1100 pF
  • Polarity : P-Channel
  • Mounting Style : SMD/SMT
  • Package / Case : SOT-23
  • Certified (AEC-Q101...etc) : AEC-Q101