MOSFET - RM50P60ALD
Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.
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- Vdss (V) : 60 V
- Id @ 25C (A) : 50 A
- Rds-on (typ) (mOhms) : 23 mOhms
- Total Gate Charge (nQ) typ : 75 nQ
- Maximum Power Dissipation (W) : 95 W
- Vgs(th) (typ) : 2.0 V
- Input Capacitance (Ciss) : 6460 pF
- Polarity : P-Channel
- Mounting Style : Through Hole
- Package / Case : TO-252(D-PAK)
