A Discrete Semiconductor Manufacturer
RM8N650TI

MOSFET - RM8N650TI

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Vdss (V) : 650 V
  • Id @ 25C (A) : 8.0 A
  • Rds-on (typ) (mOhms) : 540 mOhms
  • Total Gate Charge (nQ) typ : 14.5 nQ
  • Maximum Power Dissipation (W) : 31.7 W
  • Vgs(th) (typ) : 3 V
  • Input Capacitance (Ciss) : 680 pF
  • Polarity : N-Channel
  • Mounting Style : Through Hole
  • Package / Case : TO-220F