A Discrete Semiconductor Manufacturer
RMN60N280T7

MOSFET - RMN60N280T7

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

Please click "back to search" button to return to your search results.

  • Vdss (V) : 600 V
  • Id @ 25C (A) : 11.5 A
  • Total Gate Charge (nQ) typ : 30 nQ
  • Maximum Power Dissipation (W) : 104 W
  • Input Capacitance (Ciss) : 1020 pF
  • Polarity : N-Channel
  • Mounting Style : Through Hole
  • Package / Case : TO-247