A Discrete Semiconductor Manufacturer
SC3S12015A

Silicon Carbide Schottky - SC3S12015A

Please see below for general parameters and datasheet link. You're welcome to place a quote or sample request with the links below or contact us if any questions.

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  • Reverse Voltage Vr : 1200 V
  • Forward Current Io : 15.0 A
  • Max Surge Current : 150A
  • Forward Voltage Vf : 1.8 V
  • Reverse Current Ir : 50 uA
  • Package / Case : TO-220A
  • Mounting Style : Through-Hole
  • Notes : Generation 3
  • Typ. Capacitance Charge (nQ) : 110 nQ